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Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations
Ernst-Moritz-Arndt-University of Greifswald, Felix-Haussdorffstr. 6, Greifswald D-17487, Germany
Received: 27 November 2012; in revised form: 16 January 2013 / Accepted: 22 January 2013 / Published: 5 February 2013
Abstract: We are motivated to compute delicate chemical vapor deposition (CVD) processes. Such processes are used to deposit thin films of metallic or ceramic materials, such as SiC or a mixture of SiC and TiC. For practical simulations and for studying the characteristics in the deposition area, we have to deal with delicate multiscale models. We propose a multiscale model based on two different software packages. The large scales are simulated with computational fluid dynamics (CFD) software based on the transportreaction model (or macroscopic model), and the small scales are simulated with ordinary differential equations (ODE) software based on the reactive precursor gas model (or microscopic model). Our contribution is to upscale the correlation of the underlying microscale species to the macroscopic model and reformulate the fast reaction model. We obtain a computable model and apply a standard CFD software code without losing the information of the fast processes. For the multiscale model, we present numerical results of a real-life deposition process.
Keywords: numerical methods; CVD processes; regression method; iteration process; optimization; computable models
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MDPI and ACS Style
Geiser, J. Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations. Polymers 2013, 5, 142-160.
Geiser J. Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations. Polymers. 2013; 5(1):142-160.
Geiser, Juergen. 2013. "Multiscale Modeling of Chemical Vapor Deposition (CVD) Apparatus: Simulations and Approximations." Polymers 5, no. 1: 142-160.