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Crystals 2018, 8(9), 350; https://doi.org/10.3390/cryst8090350

A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package

1
Department of Electronic Engineering, National Formosa University, Yunlin 632, Taiwan
2
Department of Electro-Optical Engineering & Graduate Institute of Electro-Optical and Materials Science, National Formosa University, Yunlin 632, Taiwan
*
Author to whom correspondence should be addressed.
Received: 14 July 2018 / Revised: 9 August 2018 / Accepted: 28 August 2018 / Published: 31 August 2018
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Abstract

In this study, the small-size and side-view LED packages used in the backlight modules were examined by performing the electrostatic discharge (ESD) process. The high voltages used for the ESD process were 2 kV, 3 kV, and 4 kV. After ESD, the current–voltage curves were scanned from −7 V to 3 V. It was found that the significant leakage currents were in the reverse bias of 4 V~7 V and also in the forward bias of 1 V~2.5 V for ESD-damaged LED chips. However, the phenomenon of a slight increase in current was not found for the non-damaged samples. In our study case, the screening conditions could be set at a bias of −7 V or 2.3 V and the current of 0.1 µA. View Full-Text
Keywords: ESD; side view LED package ESD; side view LED package
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).
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Chen, W.-R.; Luo, Y.-S. A Screen Method for the Mass-Production of the Small-Size and Side-View LED Package. Crystals 2018, 8, 350.

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