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Crystals 2018, 8(1), 27; doi:10.3390/cryst8010027

Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations

Department of Physics, Inha University, Incheon 22212, Korea
Received: 15 December 2017 / Revised: 7 January 2018 / Accepted: 8 January 2018 / Published: 10 January 2018
(This article belongs to the Special Issue Advances in GaN Crystals and Their Applications)
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Light extraction efficiency (LEE) of GaN-based nanorod blue light-emitting diode (LED) structures is investigated using finite-difference time-domain (FDTD) simulations. When the LEE is calculated for different source positions inside the nanorod, the LEE is found to depend strongly on the source positions and the polarization directions for each source position, implying that the LEE of nanorod LED structures should be evaluated by averaging over source positions and polarization directions for determining the LEE accurately. The averaged LEE of nanorod LED structures is simulated as the radius, the p-GaN thickness, and the n-GaN thickness is varied, and the optimum structural parameters can be obtained. In addition, the far-field pattern is simulated when considering the averaging effects, and the circularly symmetric and uniform emission distribution is obtained. View Full-Text
Keywords: GaN; light-emitting diode; light extraction efficiency; FDTD GaN; light-emitting diode; light extraction efficiency; FDTD

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Ryu, H.-Y. Evaluation of Light Extraction Efficiency of GaN-Based Nanorod Light-Emitting Diodes by Averaging over Source Positions and Polarizations. Crystals 2018, 8, 27.

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