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Crystals 2018, 8(1), 28; https://doi.org/10.3390/cryst8010028

Interface Effects on Screw Dislocations in Heterostructures

1
Microsystem and Terahertz Research Center, CAEP, Chengdu 610200, China
2
Institute for Structure and Function, Chongqing University, Chongqing 401331, China
3
College of Materials Science and Engineering, Chongqing University, Chongqing 400044, China
*
Author to whom correspondence should be addressed.
Received: 14 November 2017 / Revised: 6 January 2018 / Accepted: 8 January 2018 / Published: 10 January 2018
(This article belongs to the Special Issue Crystal Dislocations: Their Impact on Physical Properties of Crystals)
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Abstract

The governing equation of screw dislocations in heterostructures is constructed using image method. The interface type ( 1 γ 1 ) and distance between dislocation and interface h are considered in the new equation. The Peierls–Nabarro equations for screw dislocations in bulk and semi-infinite materials can be recovered when γ = 0 and γ = 1 . The soft ( γ < 0 ) and hard ( γ > 0 ) interfaces can enhance and reduce the Peierls stress of screw dislocations near the interface, respectively. The interface effects on dislocations decrease with the increasing of distance h. The Al/TiC heterostructure is investigated as a model interface to study the unstable stacking fault energy and dislocation properties of the interface. The mismatch of lattice constants and shear modulus at the interface results in changes of the unstable stacking fault energy. Then, the changes of the unstable stacking fault energy also have an important effect on dislocation properties, comparing with γ and h. View Full-Text
Keywords: interface effects; screw dislocation; image method; Peierls–Nabarro model interface effects; screw dislocation; image method; Peierls–Nabarro model
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Wang, J.; Sun, T.; Xu, W.; Wu, X.; Wang, R. Interface Effects on Screw Dislocations in Heterostructures. Crystals 2018, 8, 28.

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