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Crystals 2017, 7(6), 163; doi:10.3390/cryst7060163

Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates

1
Ioffe Institute, RAS, 26 Polytekhnicheskaya st., St. Petersburg 194021, Russia
2
Department of Materials Science & Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea
3
Institute of Problems of Mechanical Engineering, RAS, Bolshoj 61, Vasil. Ostrov, St. Petersburg 199178, Russia
4
Department of Mechanics and Control Processes, Peter the Great St. Petersburg Polytechnic University, St. Petersburg 194021, Russia
5
ITMO University, Kronverkskiy pr. 49, St. Petersburg, 197101, Russia
6
National University of Science and Technology, MISIS, Moscow 119991, Russia
Current address: Pohang University of Science and Technology, Pohang 790-784, Korea.
*
Author to whom correspondence should be addressed.
Academic Editor: Mesarovic Sinisa Dj.
Received: 30 April 2017 / Revised: 27 May 2017 / Accepted: 1 June 2017 / Published: 4 June 2017
(This article belongs to the Special Issue Plasticity of Crystals and Interfaces)
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Abstract

To exploit unique properties of thin films of group III-nitride semiconductors, the production of native substrates is to be developed. The best choice would be AlN; however, presently available templates on sapphire or SiC substrates are defective. The quality of AlN could be improved by eliminating the substrate during the layer growth. In this paper, we demonstrate freestanding AlN layers fabricated by an SiC substrate evaporation method. Such layers were used to investigate dislocation structures near the former AlN–SiC interface. Specimens were characterized by synchrotron radiation imaging, triple-axis diffractometry and transmission electron microscopy (TEM). We found that the evaporation process under non-optimal conditions affected the dislocation structure. When the growth had been optimized, AlN layers showed a uniform distribution of dislocations. The dislocations tended to constitute low-angle subgrain boundaries, which produced out-of-plane and in-plane tilt angles of about 2–3 arc-min. Similar broadening was observed in both symmetric and asymmetric rocking curves, which proved the presence of edge, screws as well as mixed dislocation content. TEM revealed arrays of edge threading dislocations, but their predominance over the other threading dislocations was not supported by present study. To explain the experimental observations, a theoretical model of the dislocation structure formation is proposed. View Full-Text
Keywords: dislocations; AlN; SiC; X-ray imaging; X-ray scattering dislocations; AlN; SiC; X-ray imaging; X-ray scattering
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MDPI and ACS Style

Argunova, T.S.; Gutkin, M.Y.; Je, J.H.; Kalmykov, A.E.; Kazarova, O.P.; Mokhov, E.N.; Mikaelyan, K.N.; Myasoedov, A.V.; Sorokin, L.M.; Shcherbachev, K.D. Distribution of Dislocations near the Interface in AlN Crystals Grown on Evaporated SiC Substrates. Crystals 2017, 7, 163.

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