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Crystals 2016, 6(10), 130; doi:10.3390/cryst6100130

Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method

1
School of Materials Science and Engineering, Nanchang University, Nanchang 330031, China
2
Department of Science, Nanchang Institute of Technology, Nanchang 330099, China
*
Author to whom correspondence should be addressed.
Academic Editor: Ronald W. Armstrong
Received: 3 September 2016 / Revised: 3 October 2016 / Accepted: 6 October 2016 / Published: 12 October 2016
(This article belongs to the Special Issue Crystal Dislocations)
View Full-Text   |   Download PDF [6349 KB, uploaded 12 October 2016]   |  

Abstract

Directionally solidified multicrystalline silicon (mc-Si)-based solar cells have dominated the global photovoltaic market in recent years. The photovoltaic performance of mc-Si solar cells is strongly influenced by their crystalline defects. The occurrence of minicrystallization results in much smaller grain size and, therefore, a larger number of grain boundaries in mc-Si ingots. Dislocations in the minicrystallized regions have been rarely investigated in the literature. In this work, optical microscopy was used to investigate dislocations in the mincrystallized regions in mc-Si ingots grown by the directional solidification method. The distribution of dislocations was found to be highly inhomogeneous from one grain to another in the mincrystallized regions. High inhomogeneity of dislocation distribution was also observed in individual grains. Serious shunting behavior was observed in the mc-Si solar cells containing minicrystallized regions, which strongly deteriorates their photovoltaic properties. The shunting was found to be highly localized to the minicrystallized regions. View Full-Text
Keywords: crystal dislocation; multicrystalline silicon; directional solidification; minicrystallization; solar cell crystal dislocation; multicrystalline silicon; directional solidification; minicrystallization; solar cell
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Chen, N.; Qiu, S.; Huang, J.; Du, G.; Liu, G. Study of Dislocations in the Minicrystallized Regions in Multicrystalline Silicon Grown by the Directional Solidification Method. Crystals 2016, 6, 130.

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