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Crystals 2016, 6(10), 128; doi:10.3390/cryst6100128

Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique

1
National High Magnetic Field Laboratory, Florida State University, Tallahassee, FL 32310, USA
2
Department of Physics, Florida State University, Tallahassee, FL 32310, USA
3
Department of Chemical and Biomedical Engineering, Florida State University, Tallahassee, FL 32310, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Haidong Zhou
Received: 31 August 2016 / Revised: 22 September 2016 / Accepted: 26 September 2016 / Published: 2 October 2016
(This article belongs to the Special Issue Correlated Electron Crystals)
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Abstract

We describe a modified Bridgman growth technique to produce single crystals of the strongly correlated electron material URu2Si2 and its nonmagnetic analogue ThRu2Si2. Bulk thermodynamic and electrical transport measurements show that the properties of crystals produced in this way are comparable to those previously synthesized using the Czochralski or conventional molten metal flux growth techniques. For the specimens reported here, we find residual resistivity ratios R R R = ρ 300 K / ρ 0 as large as 116 and 187 for URu2Si2 and ThRu2Si2, respectively. View Full-Text
Keywords: URu2Si2; hidden order; single crystal; molten metal flux; Bridgman URu2Si2; hidden order; single crystal; molten metal flux; Bridgman
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Gallagher, A.; Nelson, W.L.; Chen, K.W.; Besara, T.; Siegrist, T.; Baumbach, R.E. Single Crystal Growth of URu2Si2 by the Modified Bridgman Technique. Crystals 2016, 6, 128.

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