Crystals 2012, 2(3), 935-945; doi:10.3390/cryst2030935
Article

One-Pot Synthesis of Cu(II) Complex with Partially Oxidized TTF Moieties

1 Department of Chemistry, Faculty of Science, Ibaraki University, 2-1-1 Bunkyo, Mito, Ibaraki 310-8371, Japan 2 Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennoudai, Tsukuba, Ibaraki 305-8571, Japan
* Author to whom correspondence should be addressed.
Received: 20 April 2012; in revised form: 14 June 2012 / Accepted: 26 June 2012 / Published: 10 July 2012
(This article belongs to the Special Issue Molecular Conductors)
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Abstract: The one-pot synthesis of a Cu(II) complex with partially oxidized tetrathiafulvalene (TTF) moieties in its capping MT-Hsae-TTF ligands, [CuII(MT-sae-TTF)2] [CuICl2] was realized by the simultaneous occurrence of Cu(II) complexation and CuIICl2 mediated oxidation of TTF moieties. The crystal structure was composed of one-dimensional columns formed by partially oxidized TTF moieties and thus the cation radical salt showed relatively high electrical conductivity. Tight binding band structure calculations indicated the existence of a Peierls gap due to the tetramerization of the TTF moieties in the one-dimensional stacking column at room temperature, which is consistent with the semiconducting behavior of this salt.
Keywords: TTF-based metal complex; Schiff base-type TTF-ligand; partial oxidation of TTF; one-pot synthesis; electrical conductivity; π-d interaction

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MDPI and ACS Style

Nishikawa, H.; Kitabatake, R.; Mitsumoto, K.; Shiga, T.; Oshio, H. One-Pot Synthesis of Cu(II) Complex with Partially Oxidized TTF Moieties. Crystals 2012, 2, 935-945.

AMA Style

Nishikawa H, Kitabatake R, Mitsumoto K, Shiga T, Oshio H. One-Pot Synthesis of Cu(II) Complex with Partially Oxidized TTF Moieties. Crystals. 2012; 2(3):935-945.

Chicago/Turabian Style

Nishikawa, Hiroyuki; Kitabatake, Ryosuke; Mitsumoto, Kiyotaka; Shiga, Takuya; Oshio, Hiroki. 2012. "One-Pot Synthesis of Cu(II) Complex with Partially Oxidized TTF Moieties." Crystals 2, no. 3: 935-945.

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