Crystals 2012, 2(3), 730-740; doi:10.3390/cryst2030730
Article

Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor

Masatoshi Sakai 1,* email, Mitsutoshi Hanada 1 email, Shigekazu Kuniyoshi 1 email, Hiroshi Yamauchi 1 email, Masakazu Nakamura 2 email and Kazuhiro Kudo 1 email
1 Department of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan 2 Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
* Author to whom correspondence should be addressed.
Received: 20 March 2012; in revised form: 15 June 2012 / Accepted: 18 June 2012 / Published: 29 June 2012
(This article belongs to the Special Issue Molecular Conductors)
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Abstract: A gate-induced thermally stimulated current (TSC) on β′-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied VPG and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate.
Keywords: ferroelectricity; pyroelectric current; field effect transistor; Mott insulator; charge order

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MDPI and ACS Style

Sakai, M.; Hanada, M.; Kuniyoshi, S.; Yamauchi, H.; Nakamura, M.; Kudo, K. Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals 2012, 2, 730-740.

AMA Style

Sakai M, Hanada M, Kuniyoshi S, Yamauchi H, Nakamura M, Kudo K. Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals. 2012; 2(3):730-740.

Chicago/Turabian Style

Sakai, Masatoshi; Hanada, Mitsutoshi; Kuniyoshi, Shigekazu; Yamauchi, Hiroshi; Nakamura, Masakazu; Kudo, Kazuhiro. 2012. "Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor." Crystals 2, no. 3: 730-740.

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