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Crystals 2012, 2(3), 730-740; doi:10.3390/cryst2030730

Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor

1
Department of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan
2
Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan
*
Author to whom correspondence should be addressed.
Received: 20 March 2012 / Revised: 15 June 2012 / Accepted: 18 June 2012 / Published: 29 June 2012
(This article belongs to the Special Issue Molecular Conductors)
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Abstract

A gate-induced thermally stimulated current (TSC) on β′-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied VPG and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate.
Keywords: ferroelectricity; pyroelectric current; field effect transistor; Mott insulator; charge order ferroelectricity; pyroelectric current; field effect transistor; Mott insulator; charge order
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Sakai, M.; Hanada, M.; Kuniyoshi, S.; Yamauchi, H.; Nakamura, M.; Kudo, K. Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor. Crystals 2012, 2, 730-740.

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