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Crystals 2012, 2(2), 374-392; doi:10.3390/cryst2020374
Review

Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System

1,2
Received: 12 March 2012; in revised form: 18 April 2012 / Accepted: 20 April 2012 / Published: 8 May 2012
(This article belongs to the Special Issue Molecular Conductors)
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Abstract: The Mott-Anderson transition has been known as a metal-insulator (MI) transition due to both strong electron-electron interaction and randomness of the electrons. For example, the MI transition in doped semiconductors and transition metal oxides has been investigated up to now as a typical example of the Mott-Anderson transition for changing electron correlations by carrier number control in concurrence with inevitable randomness. On the other hand, molecular conductors have been known as typical strongly correlated electron systems with bandwidth controlled Mott transition. In this paper, we demonstrate our recent studies on the randomness effect of the strongly correlated electrons of the BEDT-TTF molecule based organic conductors. X-ray irradiation on the crystals introduces molecular defects in the insulating anion layer, which cause random potential modulation of the correlated electrons in the conductive BEDT-TTF layer. In combination with hydrostatic pressure, we are able to control the parameters for randomness and correlations for electrons approaching the Mott-Anderson transition.
Keywords: organic conductor; Mott transition; Anderson localization; X-ray irradiation organic conductor; Mott transition; Anderson localization; X-ray irradiation
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Sasaki, T. Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System. Crystals 2012, 2, 374-392.

AMA Style

Sasaki T. Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System. Crystals. 2012; 2(2):374-392.

Chicago/Turabian Style

Sasaki, Takahiko. 2012. "Mott-Anderson Transition in Molecular Conductors: Influence of Randomness on Strongly Correlated Electrons in the κ-(BEDT-TTF)2X System." Crystals 2, no. 2: 374-392.


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