Crystals 2011, 1(3), 104-111; doi:10.3390/cryst1030104

Indium Doping in BaSn3–x Inx (0 ≤ x ≤ 0.2) with Ni3Sn Structure

1, 1,2, 3 and 1,* email
Received: 20 June 2011; in revised form: 1 July 2011 / Accepted: 11 July 2011 / Published: 12 July 2011
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Abstract: Investigations of the system Ba–In–Sn, with the objective to synthesize Ba8In16Sn30 clathrate using Sn and In flux reactions, yielded instead the known BaSn3 compound (P63/mmc; a = 7.228(2) Å, c = 5.469(3) Å) from Sn flux and its In-doped variant BaSn2.8In0.2(1) (a = 7.260(1) Å, c = 5.382(2) Å) from In flux. BaSn3–xInx is the first, and up until now, the only ternary phase containing these elements. Its structure is isomorphic with the Ni3Sn type (Pearson symbol hP8) and is apparently capable of sustaining small variations in the valence electron count by virtue of replacing Sn with the electron poorer In. Electrical resistivity measurements on single-crystals of both undoped and doped phases show different metallic-like behavior, suggesting that neither BaSn3 nor BaSn3–xInx are valence compounds.
Keywords: polar intermetallic phases; stannides; barium; tin; crystal structure
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MDPI and ACS Style

Schäfer, M.C.; Yamasaki, Y.; Fritsch, V.; Bobev, S. Indium Doping in BaSn3–x Inx (0 ≤ x ≤ 0.2) with Ni3Sn Structure. Crystals 2011, 1, 104-111.

AMA Style

Schäfer MC, Yamasaki Y, Fritsch V, Bobev S. Indium Doping in BaSn3–x Inx (0 ≤ x ≤ 0.2) with Ni3Sn Structure. Crystals. 2011; 1(3):104-111.

Chicago/Turabian Style

Schäfer, Marion C.; Yamasaki, Yuki; Fritsch, Veronika; Bobev, Svilen. 2011. "Indium Doping in BaSn3–x Inx (0 ≤ x ≤ 0.2) with Ni3Sn Structure." Crystals 1, no. 3: 104-111.

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