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Computers 2017, 6(2), 16; doi:10.3390/computers6020016

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, 20133 Milano, Italy
Author to whom correspondence should be addressed.
Received: 3 March 2017 / Revised: 13 April 2017 / Accepted: 18 April 2017 / Published: 21 April 2017
(This article belongs to the Special Issue 3D Flash Memories)


We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes. View Full-Text
Keywords: Flash memory; NAND Flash reliability; NAND Flash scaling; 3D NAND Flash Flash memory; NAND Flash reliability; NAND Flash scaling; 3D NAND Flash

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Spinelli, A.S.; Compagnoni, C.M.; Lacaita, A.L. Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices. Computers 2017, 6, 16.

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