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Materials 2016, 9(12), 990; doi:10.3390/ma9120990

Luminescence Properties and Mechanisms of CuI Thin Films Fabricated by Vapor Iodization of Copper Films

School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
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Academic Editor: Giorgio Biasiol
Received: 15 September 2016 / Revised: 2 November 2016 / Accepted: 22 November 2016 / Published: 7 December 2016
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Abstract

Copper iodide (CuI) thin films were grown on Si(100) substrates using a copper film iodination reaction method. It was found that γ-CuI films have a uniform and dense microstructure with (111)-orientation. Transmission spectra indicated that CuI thin films have an average transmittance of about 60% in the visible range and the optical band gap is 3.01 eV. By checking the effect of the thickness of the Cu films and annealing condition on the photoluminescence (PL) character of CuI films, the luminescence mechanisms of CuI have been comprehensively analyzed, and the origin of different PL emissions are proposed with Cu vacancy and iodine vacancy as defect levels. View Full-Text
Keywords: CuI thin films; photoluminescence; vapor iodization; iodine vacancy CuI thin films; photoluminescence; vapor iodization; iodine vacancy
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MDPI and ACS Style

Lin, G.; Zhao, F.; Zhao, Y.; Zhang, D.; Yang, L.; Xue, X.; Wang, X.; Qu, C.; Li, Q.; Zhang, L. Luminescence Properties and Mechanisms of CuI Thin Films Fabricated by Vapor Iodization of Copper Films. Materials 2016, 9, 990.

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