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Materials 2015, 8(9), 5795-5805; doi:10.3390/ma8095276

Trap Exploration in Amorphous Boron-Doped ZnO Films

Department of Electronic Engineering, Ming Chuan University, 5 De-Ming Rd., Gui-Shan, Taoyuan 33348, Taiwan
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Author to whom correspondence should be addressed.
Academic Editor: Wen-Hsiang Hsieh
Received: 28 May 2015 / Accepted: 25 August 2015 / Published: 31 August 2015
(This article belongs to the Special Issue Selected Papers from ICETI2014)
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Abstract

This paper addresses the trap exploration in amorphous boron-doped ZnO (ZnO:B) films using an asymmetric structure of metal-oxide-metal. In this work, the structure of Ni/ZnO:B/TaN is adopted and the ZnO:B film is deposited by RF magnetron sputtering. The as-deposited ZnO:B film is amorphous and becomes polycrystalline when annealing temperature is above 500 °C. According to the analysis of conduction mechanism in the as-deposited ZnO:B devices, Ohmic conduction is obtained at positive bias voltage because of the Ohmic contact at the TaN/ZnO:B interface. Meanwhile, hopping conduction is obtained at negative bias voltage due to the defective traps in ZnO:B in which the trap energy level is lower than the energy barrier at the Ni/ZnO:B interface. In the hopping conduction, the temperature dependence of I-V characteristics reveals that the higher the temperature, the lower the current. This suggests that no single-level traps, but only multiple-level traps, exist in the amorphous ZnO:B films. Accordingly, the trap energy levels (0.46–0.64 eV) and trap spacing (1.1 nm) in these multiple-level traps are extracted. View Full-Text
Keywords: boron doped ZnO; conduction mechanism; trap energy level; trap spacing boron doped ZnO; conduction mechanism; trap energy level; trap spacing
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Chiu, F.-C.; Chiang, W.-P. Trap Exploration in Amorphous Boron-Doped ZnO Films. Materials 2015, 8, 5795-5805.

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