Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
Abstract
:1. Introduction
2. Results and Discussion
Material | me* (m0) | mh* (m0) | C11 1011 (dyn cm−2) | C12 1011 (dyn cm−2) | ( ac−av) (eV) | b (eV) |
---|---|---|---|---|---|---|
InAs | 0.023 | 0.41 | 8.32 | 4.52 | −4.08 | −1.8 |
GaAs | 0.068 | 0.5 | 12.21 | 5.66 | −6 | −2 |
Sample | Data | HQD/DQD | Aspect Ratio (α) | E0 (eV) | E1 (eV) | E2 (eV) |
---|---|---|---|---|---|---|
QDs | Experiments | 8.5/35 | 0.24 | 1.086 | 1.156 | 1.224 |
Simulation | 3.8/28 | 0.13 | 1.083 | 1.151 | 1.238 | |
QDCL | Experiments | 8.5/35 | 0.24 | 1.054 | 1.117 | 1.194 |
Simulation | 4/30 | 0.13 | 1.051 | 1.113 | 1.193 | |
Expected results | 3.8/28 | 0.13 | 1.068 | 1.131 | 1.213 | |
QDUL | Experiments | 5/41 | 0.12 | 1.21 | 1.261 | – |
Simulation | 2.5/29 | 0.08 | 1.204 | 1.265 | 1.331 | |
Expected results | 3.8/28 | 0.13 | 1.071 | 1.141 | 1.217 |
3. Experimental Section
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Souaf, M.; Baira, M.; Nasr, O.; Alouane, M.H.H.; Maaref, H.; Sfaxi, L.; Ilahi, B. Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position. Materials 2015, 8, 4699-4709. https://doi.org/10.3390/ma8084699
Souaf M, Baira M, Nasr O, Alouane MHH, Maaref H, Sfaxi L, Ilahi B. Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position. Materials. 2015; 8(8):4699-4709. https://doi.org/10.3390/ma8084699
Chicago/Turabian StyleSouaf, Manel, Mourad Baira, Olfa Nasr, Mohamed Helmi Hadj Alouane, Hassen Maaref, Larbi Sfaxi, and Bouraoui Ilahi. 2015. "Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position" Materials 8, no. 8: 4699-4709. https://doi.org/10.3390/ma8084699