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Materials 2015, 8(8), 4699-4709; doi:10.3390/ma8084699

Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position

1
Laboratoire de Micro-Optoélectronique et Nanostructures, Faculté des Sciences, Avenue de l'environnement, Université de Monastir, Monastir 5019, Tunisia
2
King Saud University, Department of Physics & Astronomy, College of Sciences, P.O. 2455, Riyadh 11451, Saudi Arabia
*
Author to whom correspondence should be addressed.
Academic Editor: Sanjaya Senanayake
Received: 4 June 2015 / Revised: 8 July 2015 / Accepted: 13 July 2015 / Published: 24 July 2015
(This article belongs to the Special Issue Epitaxial Materials 2015)
View Full-Text   |   Download PDF [1011 KB, uploaded 24 July 2015]   |  

Abstract

This work reports on theoretical and experimental investigation of the impact of InAs quantum dots (QDs) position with respect to InGaAs strain reducing layer (SRL). The investigated samples are grown by molecular beam epitaxy and characterized by photoluminescence spectroscopy (PL). The QDs optical transition energies have been calculated by solving the three dimensional Schrödinger equation using the finite element methods and taking into account the strain induced by the lattice mismatch. We have considered a lens shaped InAs QDs in a pure GaAs matrix and either with InGaAs strain reducing cap layer or underlying layer. The correlation between numerical calculation and PL measurements allowed us to track the mean buried QDs size evolution with respect to the surrounding matrix composition. The simulations reveal that the buried QDs’ realistic size is less than that experimentally driven from atomic force microscopy observation. Furthermore, the average size is found to be slightly increased for InGaAs capped QDs and dramatically decreased for QDs with InGaAs under layer. View Full-Text
Keywords: modeling; quantum dots; strain reducing layer modeling; quantum dots; strain reducing layer
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Souaf, M.; Baira, M.; Nasr, O.; Alouane, M.H.H.; Maaref, H.; Sfaxi, L.; Ilahi, B. Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position. Materials 2015, 8, 4699-4709.

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