Materials 2014, 7(2), 948-962; doi:10.3390/ma7020948
Article

Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells

1 Department of Electrical Engineering, and Graduate Institute of Optoelectronic Engineering, National Chung Hsing University, Taichung 40227, Taiwan 2 Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan 3 Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung 81148, Taiwan
* Author to whom correspondence should be addressed.
Received: 30 September 2013; in revised form: 2 January 2014 / Accepted: 20 January 2014 / Published: 7 February 2014
(This article belongs to the Special Issue Solar Energy Materials 2013)
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Abstract: In this study, silicon nitride (SiNx) thin films were deposited on polyimide (PI) substrates as barrier layers by a plasma enhanced chemical vapor deposition (PECVD) system. The gallium-doped zinc oxide (GZO) thin films were deposited on PI and SiNx/PI substrates at room temperature (RT), 100 and 200 °C by radio frequency (RF) magnetron sputtering. The thicknesses of the GZO and SiNx thin films were controlled at around 160 ± 12 nm and 150 ± 10 nm, respectively. The optimal deposition parameters for the SiNx thin films were a working pressure of 800 × 10−3 Torr, a deposition power of 20 W, a deposition temperature of 200 °C, and gas flowing rates of SiH4 = 20 sccm and NH3 = 210 sccm, respectively. For the GZO/PI and GZO-SiNx/PI structures we had found that the GZO thin films deposited at 100 and 200 °C had higher crystallinity, higher electron mobility, larger carrier concentration, smaller resistivity, and higher optical transmittance ratio. For that, the GZO thin films deposited at 100 and 200 °C on PI and SiNx/PI substrates with thickness of ~1000 nm were used to fabricate p-i-n hydrogenated amorphous silicon (α-Si) thin film solar cells. 0.5% HCl solution was used to etch the surfaces of the GZO/PI and GZO-SiNx/PI substrates. Finally, PECVD system was used to deposit α-Si thin film onto the etched surfaces of the GZO/PI and GZO-SiNx/PI substrates to fabricate α-Si thin film solar cells, and the solar cells’ properties were also investigated. We had found that substrates to get the optimally solar cells’ efficiency were 200 °C-deposited GZO-SiNx/PI.
Keywords: silicon nitride (SiNx); polyimide (PI); PECVD; GZO thin film; silicon thin film solar cell

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MDPI and ACS Style

Wang, F.-H.; Kuo, H.-H.; Yang, C.-F.; Liu, M.-C. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells. Materials 2014, 7, 948-962.

AMA Style

Wang F-H, Kuo H-H, Yang C-F, Liu M-C. Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells. Materials. 2014; 7(2):948-962.

Chicago/Turabian Style

Wang, Fang-Hsing; Kuo, Hsin-Hui; Yang, Cheng-Fu; Liu, Min-Chu. 2014. "Role of SiNx Barrier Layer on the Performances of Polyimide Ga2O3-doped ZnO p-i-n Hydrogenated Amorphous Silicon Thin Film Solar Cells." Materials 7, no. 2: 948-962.

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