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Materials 2014, 7(11), 7339-7348; doi:10.3390/ma7117339

Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films

Department of Electronic Engineering, Ming Chuan University, 5 De-Ming Rd., Gui-Shan, Taoyuan 33348, Taiwan
Received: 21 August 2014 / Revised: 23 October 2014 / Accepted: 7 November 2014 / Published: 12 November 2014
(This article belongs to the Special Issue Selected Papers from ICETI2014)
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Abstract

In this work, metal/oxide/metal capacitors were fabricated and investigated using transparent boron doped zinc oxide (ZnO:B) films for resistance switching memory applications. The optical band gap of ZnO:B films was determined to be about 3.26 eV and the average value of transmittance of ZnO:B films was about 91% in the visible light region. Experimental results indicated that the resistance switching in the W/ZnO:B/W structure is nonpolar. The resistance ratio of high resistance state (HRS) to low resistance state (LRS) is about of the order of 105 at room temperature. According to the temperature dependence of current-voltage characteristics, the conduction mechanism in ZnO:B films is dominated by hopping conduction and Ohmic conduction in HRS and LRS, respectively. Therefore, trap spacing (1.2 nm) and trap energy levels in ZnO:B films could be obtained. View Full-Text
Keywords: boron doped zinc oxide; resistance switching; conduction mechanism; trap spacing; trap energy level boron doped zinc oxide; resistance switching; conduction mechanism; trap spacing; trap energy level
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Chiu, F.-C. Conduction Mechanisms in Resistance Switching Memory Devices Using Transparent Boron Doped Zinc Oxide Films. Materials 2014, 7, 7339-7348.

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