Abstract: Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more complex Si microsystems; enabling, e.g., gas sensors at low cost. In this work, we demonstrate that the characteristics of CNTs grown on specific locations can be changed by tuning the synthesis conditions. We also investigate the role of the contact between CNTs and the Si microsystem; observing a large influence on the electrical characteristics of our devices. Different contact modes can render either an ohmic or Schottky-like rectifying characteristics.
Keywords: carbon nanotubes; local synthesis; microheater; contacts; Schottky barrier
This is an open access article distributed under the
Creative Commons Attribution License which permits unrestricted use, distribution,
and reproduction in any medium, provided the original work is properly cited.
Export to BibTeX
MDPI and ACS Style
Haugen, T.B.; Ta, B.Q.; Halvorsen, E.; Hoivik, N.; Aasmundtveit, K.E. Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts. Materials 2013, 6, 3094-3107.
Haugen TB, Ta BQ, Halvorsen E, Hoivik N, Aasmundtveit KE. Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts. Materials. 2013; 6(8):3094-3107.
Haugen, Tormod B.; Ta, Bao Q.; Halvorsen, Einar; Hoivik, Nils; Aasmundtveit, Knut E. 2013. "Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts." Materials 6, no. 8: 3094-3107.