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Materials 2013, 6(8), 3094-3107; doi:10.3390/ma6083094

Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts

Department of Micro and Nano Systems Technology (IMST), Vestfold University College (HiVe), Raveien 197, 3184 Borre, P.O. Box 2243, Tønsberg N-3103, Norway
Author to whom correspondence should be addressed.
Received: 30 April 2013 / Revised: 10 July 2013 / Accepted: 18 July 2013 / Published: 24 July 2013
(This article belongs to the Special Issue Carbon Nanotubes)
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Carbon nanotubes (CNTs) have been directly grown onto a silicon microsystem by a local synthesis method. This method has potential for wafer-level complimentary metal-oxide-semiconductor (CMOS) transistor-compatible integration of CNTs into more complex Si microsystems; enabling, e.g., gas sensors at low cost. In this work, we demonstrate that the characteristics of CNTs grown on specific locations can be changed by tuning the synthesis conditions. We also investigate the role of the contact between CNTs and the Si microsystem; observing a large influence on the electrical characteristics of our devices. Different contact modes can render either an ohmic or Schottky-like rectifying characteristics.
Keywords: carbon nanotubes; local synthesis; microheater; contacts; Schottky barrier carbon nanotubes; local synthesis; microheater; contacts; Schottky barrier
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Haugen, T.B.; Ta, B.Q.; Halvorsen, E.; Hoivik, N.; Aasmundtveit, K.E. Integration of Carbon Nanotubes in Microsystems: Local Growth and Electrical Properties of Contacts. Materials 2013, 6, 3094-3107.

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