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Materials 2013, 6(4), 1496-1505; doi:10.3390/ma6041496
Article

Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon

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Received: 6 February 2013; Accepted: 2 April 2013 / Published: 12 April 2013
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Abstract: Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN.
Keywords: pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic pop-out; single crystal silicon; maximum penetration load; loading/unloading rate; statistic
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Huang, H.; Zhao, H.; Shi, C.; Zhang, L.; Wan, S.; Geng, C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials 2013, 6, 1496-1505.

AMA Style

Huang H, Zhao H, Shi C, Zhang L, Wan S, Geng C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials. 2013; 6(4):1496-1505.

Chicago/Turabian Style

Huang, Hu; Zhao, Hongwei; Shi, Chengli; Zhang, Lin; Wan, Shunguang; Geng, Chunyang. 2013. "Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon." Materials 6, no. 4: 1496-1505.


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