Abstract: Randomness and discreteness for appearance of pop-out of the single crystal silicon with a (100) orientation were studied by a self-made indentation device. For a given maximum penetration load, the load Ppo for appearance of pop-out fluctuates in a relatively large range, which makes it hard to study the effect of the loading/unloading rate on the load Ppo. Experimental results with different maximum penetration loads indicate that the critical penetration load for appearance of pop-out is in the range of 15 mN~20 mN for the current used single crystal silicon. For a given maximum penetration load, the load Ppo for appearance of pop-out seems random and discrete, but in the point of statistics, it has an obviously increasing trend with increase of the maximum penetration load and also the fraction Ppo/Pmax approximately keeps in the range of 0.2~0.5 for different maximum penetration loads changing from 15 mN to 150 mN.
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Huang, H.; Zhao, H.; Shi, C.; Zhang, L.; Wan, S.; Geng, C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials 2013, 6, 1496-1505.
Huang H, Zhao H, Shi C, Zhang L, Wan S, Geng C. Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon. Materials. 2013; 6(4):1496-1505.
Huang, Hu; Zhao, Hongwei; Shi, Chengli; Zhang, Lin; Wan, Shunguang; Geng, Chunyang. 2013. "Randomness and Statistical Laws of Indentation-Induced Pop-Out in Single Crystal Silicon." Materials 6, no. 4: 1496-1505.