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Materials 2013, 6(11), 5440-5446; doi:10.3390/ma6115440
Article

Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers

1
, 1,* , 1
, 2
, 1
 and 1
1 Department of Opto-Electronic Engineering, National Dong Hwa University, Shoufeng, Hualien 97401, Taiwan 2 No. 23-10, Wenhua Rd., Xindian District, New Taipei City 23144, Taiwan
* Author to whom correspondence should be addressed.
Received: 26 September 2013 / Revised: 5 November 2013 / Accepted: 15 November 2013 / Published: 22 November 2013
(This article belongs to the Special Issue Solar Energy Materials 2013)
Download PDF [300 KB, uploaded 22 November 2013]

Abstract

Single crystal silicon solar cells are still predominant in the market due to the abundance of silicon on earth and their acceptable efficiency. Different solar-cell structures of single crystalline Si have been investigated to boost efficiency; the heterojunction with intrinsic thin layer (HIT) structure is currently the leading technology. The record efficiency values of state-of-the art HIT solar cells have always been based on n-type single-crystalline Si wafers. Improving the efficiency of cells based on p-type single-crystalline Si wafers could provide broader options for the development of HIT solar cells. In this study, we varied the thickness of intrinsic hydrogenated amorphous Si layer to improve the efficiency of HIT solar cells on p-type Si wafers.
Keywords: solar cells; p-type Si substrate solar cells; p-type Si substrate
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Wei, C.-Y.; Lin, C.-H.; Hsiao, H.-T.; Yang, P.-C.; Wang, C.-M.; Pan, Y.-C. Efficiency Improvement of HIT Solar Cells on p-Type Si Wafers. Materials 2013, 6, 5440-5446.

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