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Strained Silicon Photonics
Centre for Innovation Competence SiLi-nano, Martin-Luther-University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3, Halle (Saale) 06120, Germany
Fraunhofer Institute for Mechanics of Materials, Walter-Hülse-Str. 1, Halle (Saale) 06120, Germany
Institute of Physics, Martin-Luther-University Halle-Wittenberg, Heinrich-Damerow-Str. 4, Halle (Saale) 06120, Germany
* Author to whom correspondence should be addressed.
Received: 22 March 2012; in revised form: 9 May 2012 / Accepted: 9 May 2012 / Published: 22 May 2012
Abstract: A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.
Keywords: silicon photonics; strain engineering; nonlinear optical properties
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MDPI and ACS Style
Schriever, C.; Bohley, C.; Schilling, J.; Wehrspohn, R.B. Strained Silicon Photonics. Materials 2012, 5, 889-908.
Schriever C, Bohley C, Schilling J, Wehrspohn RB. Strained Silicon Photonics. Materials. 2012; 5(5):889-908.
Schriever, Clemens; Bohley, Christian; Schilling, Jörg; Wehrspohn, Ralf B. 2012. "Strained Silicon Photonics." Materials 5, no. 5: 889-908.