Next Article in Journal
Influence of Surface Processing on the Biocompatibility of Titanium
Next Article in Special Issue
Study of the Distribution of Radiative Defects and Reabsorption of the UV in ZnO Nanorods-Organic Hybrid White Light Emitting Diodes (LEDs)
Previous Article in Journal
Micrograin Superplasticity: Characteristics and Utilization
Previous Article in Special Issue
Optical Properties of ZnO Nanoparticles Capped with Polymers
Materials 2011, 4(7), 1224-1237; doi:10.3390/ma4071224
Article

Defects Identification and Effects of Annealing on Lu2(1-x)Y2xSiO5 (LYSO) Single Crystals for Scintillation Application

1,2,* , 1
, 1
, 2
, 2, 1
 and 1
Received: 19 May 2011; in revised form: 21 June 2011 / Accepted: 23 June 2011 / Published: 1 July 2011
(This article belongs to the Special Issue Luminescent Materials 2011)
Download PDF [748 KB, updated 4 July 2011; original version uploaded 1 July 2011]
Abstract: The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL) in Lu2(1-x)Y2xSiO5 (LYSO) single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ), revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ) with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.
Keywords: scintillator; electronic defects; thermoluminescence; annealing treatments scintillator; electronic defects; thermoluminescence; annealing treatments
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Blahuta, S.; Bessière, A.; Viana, B.; Ouspenski, V.; Mattmann, E.; Lejay, J.; Gourier, D. Defects Identification and Effects of Annealing on Lu2(1-x)Y2xSiO5 (LYSO) Single Crystals for Scintillation Application. Materials 2011, 4, 1224-1237.

AMA Style

Blahuta S, Bessière A, Viana B, Ouspenski V, Mattmann E, Lejay J, Gourier D. Defects Identification and Effects of Annealing on Lu2(1-x)Y2xSiO5 (LYSO) Single Crystals for Scintillation Application. Materials. 2011; 4(7):1224-1237.

Chicago/Turabian Style

Blahuta, Samuel; Bessière, Aurélie; Viana, Bruno; Ouspenski, Vladimir; Mattmann, Eric; Lejay, Julien; Gourier, Didier. 2011. "Defects Identification and Effects of Annealing on Lu2(1-x)Y2xSiO5 (LYSO) Single Crystals for Scintillation Application." Materials 4, no. 7: 1224-1237.


Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert