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• Blahuta, S
• Bessière, A
• Viana, B
• Ouspenski, V
• Mattmann, E
• Lejay, J
• Gourier, D
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• Blahuta, S
• Bessière, A
• Viana, B
• Ouspenski, V
• Mattmann, E
• Lejay, J
• Gourier, D
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• Blahuta, S
• Bessière, A
• Viana, B
• Ouspenski, V
• Mattmann, E
• Lejay, J
• Gourier, D

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Materials 2011, 4(7), 1224-1237; doi:10.3390/ma4071224

Article

Defects Identification and Effects of Annealing on Lu_2(1-x)Y_2xSiO₅ (LYSO) Single Crystals for Scintillation Application

Samuel Blahuta ^1,2,* , Aurélie Bessière ¹ , Bruno Viana ¹ , Vladimir Ouspenski ² , Eric Mattmann ² , Julien Lejay ¹  and Didier Gourier ¹

¹ Ecole Nationale Supérieure de Chimie de Paris (Chimie ParisTech) et Université Pierre et Marie Curie, Laboratoire de Chimie de la Matière Condensée de Paris, UMR–CNRS 7574, 11 rue Pierre et Marie Curie, 75231 Paris Cedex 05, France ² Saint-Gobain Cristaux et Détecteurs, 104 Route de Larchant, 77140 St-Pierre-lès-Nemours, France

* Author to whom correspondence should be addressed.

Received: 19 May 2011; in revised form: 21 June 2011 / Accepted: 23 June 2011 / Published: 1 July 2011

(This article belongs to the Special Issue Luminescent Materials 2011)

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Abstract: The nature, properties and relative concentrations of electronic defects were investigated by Thermoluminescence (TL) in Lu_2(1-x)Y_2xSiO₅ (LYSO) single crystals. Ce and Tb-doped single crystals, grown by the Czochralski technique (CZ), revealed similar traps in TL. LYSO:Ce single crystals were grown by the Floating-Zone technique (FZ) with increasing oxygen concentration in the growth atmosphere. TL intensity is strongly dependent on the oxygen content of the material, and oxygen vacancies are proven to be the main electronic defects in LYSO. The effects of oxidizing and reducing annealing post-treatment on these defects were investigated. While oxidizing treatments efficiently reduce the amount of electronic defects, reducing treatments increase the amount of existing traps. In a thermally assisted tunneling mechanism, the localization of oxygen vacancies around the dopant is discussed. They are shown to be in the close vicinity of the dopant, though not in first neighbor positions.

Keywords: scintillator; electronic defects; thermoluminescence; annealing treatments

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