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Materials 2011, 4(4), 791-800; doi:10.3390/ma4040791

Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon

1,* , 1
1 Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan 2 Department of Applied Physics, University Autonoma de Madrid, Carretera Colmenar Viejo, KM 15,500, 28049 Madrid, Spain
* Author to whom correspondence should be addressed.
Received: 18 March 2011 / Revised: 4 April 2011 / Accepted: 11 April 2011 / Published: 14 April 2011
(This article belongs to the Special Issue Porous Materials 2011)
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Electrodeposition of gold into porous silicon was investigated. In the present study, porous silicon with ~100 nm in pore diameter, so-called medium-sized pores, was used as template electrode for gold electrodeposition. The growth behavior of gold deposits was studied by scanning electron microscope observation of the gold deposited porous silicon. Gold nanorod arrays with different rod lengths were prepared, and their surface-enhanced Raman scattering properties were investigated. We found that the absorption peak due to the surface plasmon resonance can be tuned by changing the length of the nanorods. The optimum length of the gold nanorods was ~600 nm for surface-enhanced Raman spectroscopy using a He-Ne laser. The reason why the optimum length of the gold nanorods was 600 nm was discussed by considering the relationship between the absorption peak of surface plasmon resonance and the wavelength of the incident laser for Raman scattering.
Keywords: gold; electrodeposition; porous silicon; Raman spectroscopy gold; electrodeposition; porous silicon; Raman spectroscopy
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Fukami, K.; Chourou, M.L.; Miyagawa, R.; Muñoz Noval, Á.; Sakka, T.; Manso-Silván, M.; Martín-Palma, R.J.; Ogata, Y.H. Gold Nanostructures for Surface-Enhanced Raman Spectroscopy, Prepared by Electrodeposition in Porous Silicon. Materials 2011, 4, 791-800.

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