Materials 2011, 4(1), 73-83; doi:10.3390/ma4010073

Active Microwave Metamaterials Incorporating Ideal Gain Devices

1,3email, 2,3email, 3email, 3, 1email, 2email and 3,* email
Received: 29 November 2010; in revised form: 15 December 2010 / Accepted: 24 December 2010 / Published: 29 December 2010
(This article belongs to the Special Issue Next Wave of Metamaterials)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Incorporation of active devices/media such as transistors for microwave and gain media for optics may be very attractive for enabling desired low loss and broadband metamaterials. Such metamaterials can even have gain which may very well lead to new and exciting physical phenomena. We investigate microwave composite right/left-handed transmission lines (CRLH-TL) incorporating ideal gain devices such as constant negative resistance. With realistic lumped element values, we have shown that the negative phase constant of this kind of transmission lines is maintained (i.e., left-handedness kept) while gain can be obtained (negative attenuation constant of transmission line) simultaneously. Possible implementation and challenging issues of the proposed active CRLH-TL are also discussed.
Keywords: active metamaterial; negative resistance device; composite right/left-handed transmission line (CRLH-TL); dispersion/attenuation relation
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MDPI and ACS Style

Si, L.-M.; Jiang, T.; Chang, K.; Chen, T.-C.; Lv, X.; Ran, L.; Xin, H. Active Microwave Metamaterials Incorporating Ideal Gain Devices. Materials 2011, 4, 73-83.

AMA Style

Si L-M, Jiang T, Chang K, Chen T-C, Lv X, Ran L, Xin H. Active Microwave Metamaterials Incorporating Ideal Gain Devices. Materials. 2011; 4(1):73-83.

Chicago/Turabian Style

Si, Li-Ming; Jiang, Tao; Chang, Kihun; Chen, Te-Chuan; Lv, Xin; Ran, Lixin; Xin, Hao. 2011. "Active Microwave Metamaterials Incorporating Ideal Gain Devices." Materials 4, no. 1: 73-83.

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