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Materials 2010, 3(6), 3565-3613; doi:10.3390/ma3063565
Review

Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy

Received: 1 April 2010; in revised form: 20 April 2010 / Accepted: 31 May 2010 / Published: 7 June 2010
(This article belongs to the Special Issue Ferromagnetic Semiconductors)
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Abstract: Dilute magnetic semiconductors (DMS) are envisioned as sources of spin-polarized carriers for future semiconductor devices which simultaneously utilize spin and charge of the carriers. The hope of discovering a DMS with ferromagnetic order up to room temperature still motivates research on suitable DMS materials. Two candidate wide-band gap DMS are Gd:GaN and Co:ZnO. We have used hard X-ray absorption spectroscopy (XAS) and in particular X-ray linear dichroism (XLD) and X-ray magnetic circular dichroism (XMCD) to study both DMS materials with element specificity and compare these findings with results from integral SQUID magnetometry as well as electron paramagnetic resonance (EPR).
Keywords: dilute magnetic semiconductors; magnetic properties; X-ray absorption spectroscopy dilute magnetic semiconductors; magnetic properties; X-ray absorption spectroscopy
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Ney, A. Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy. Materials 2010, 3, 3565-3613.

AMA Style

Ney A. Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy. Materials. 2010; 3(6):3565-3613.

Chicago/Turabian Style

Ney, Andreas. 2010. "Element Specific Versus Integral Structural and Magnetic Properties of Co:ZnO and Gd:GaN Probed with Hard X-ray Absorption Spectroscopy." Materials 3, no. 6: 3565-3613.


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