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• Yong, Z
• Liu, T
• Uruga, T
• Tanida, H
• Qi, D
• Rusydi, A
• Wee, A
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• Yong, Z
• Liu, T
• Uruga, T
• Tanida, H
• Qi, D
• Rusydi, A
• Wee, A
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• Liu, T
• Uruga, T
• Tanida, H
• Qi, D
• Rusydi, A
• Wee, A

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Materials 2010, 3(6), 3642-3653; doi:10.3390/ma3063642

Article

Ti-doped ZnO Thin Films Prepared at Different Ambient Conditions: Electronic Structures and Magnetic Properties

Zhihua Yong ^1,4 , Tao Liu ^1,2,* , Tomoya Uruga ³ , Hajime Tanida ³ , Dongchen Qi ^1,4 , Andrivo Rusydi ^1,4,5  and Andrew T. S. Wee ¹

¹ Physics Department, Faculty of Science, National University of Singapore, 117542, Singapore ² Institute for Synchrotron Radiation, Karlsruhe Institute of Technology, 76344, Germany ³ SPring-8/JASRI, Hyogo, 679-5198, Japan ⁴ NanoCore, National University of Singapore, 117576, Singapore ⁵ Singapore Synchrotron Light Source, National University of Singapore, 117603, Singapore

* Author to whom correspondence should be addressed.

Received: 20 April 2010; in revised form: 27 May 2010 / Accepted: 3 June 2010 / Published: 9 June 2010

(This article belongs to the Special Issue Ferromagnetic Semiconductors)

Download PDF Full-Text [276 KB, uploaded 9 June 2010 11:56 CEST]

Abstract: We present a comprehensive study on Ti-doped ZnO thin films using X-ray Absorption Fine Structure (XAFS) spectroscopy. Ti K edge XAFS spectra were measured to study the electronic and chemical properties of Ti ions in the thin films grown under different ambient atmospheres. A strong dependence of Ti speciation, composition, and local structures upon the ambient conditions was observed. The XAFS results suggest a major tetrahedral coordination and a 4+ valence state. The sample grown in a mixture of 80% Ar and 20% O₂ shows a portion of precipitates with higher coordination. A large distortion was observed by the Ti substitution in the ZnO lattice. Interestingly, the film prepared in 80% Ar, 20% O₂ shows the largest saturation magnetic moment of 0.827 ± 0.013 µB/Ti.

Keywords: DMS; XAFS; ZnO; vacancy; Ti

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