This is a correction to Materials 2009, 2(4), 1599-1635.

Materials 2009, 2(4), 1795; doi:10.3390/ma2041795
Correction

Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635

Yale University, P.O. Box 208284, New Haven, CT 06520-8284, USA
Received: 4 November 2009; Published: 5 November 2009
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Abstract: The author acknowledges that her former graduate students, J. E. McManis and M. Gupta, collected the data in the recent review [1], as indicated by the references therein. [...]

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MDPI and ACS Style

Pan, J.L. Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635. Materials 2009, 2, 1795.

AMA Style

Pan JL. Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635. Materials. 2009; 2(4):1795.

Chicago/Turabian Style

Pan, Janet L. 2009. "Correction: Pan, J.L. Progress to a Gallium-Arsenide Deep-Center Laser. Materials 2009, 2, 1599-1635." Materials 2, no. 4: 1795.

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