Next Article in Journal
Interfacial Reaction and Mechanical Properties of Sn-Bi Solder joints
Next Article in Special Issue
Quantifying the Performance of P-Type Transparent Conducting Oxides by Experimental Methods
Previous Article in Journal
320-nm Flexible Solution-Processed 2,7-dioctyl[1] benzothieno[3,2-b]benzothiophene Transistors
Previous Article in Special Issue
Deposition of Nanostructured CdS Thin Films by Thermal Evaporation Method: Effect of Substrate Temperature
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle
Materials 2017, 10(8), 916; https://doi.org/10.3390/ma10080916

Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering

1
Research Institute, Kochi University of Technology, Kochi 782-8502, Japan
2
X-Ray Research Laboratory, Rigaku Corporation, Tokyo 196-8666, Japan
3
Japan Synchrotron Radiation Research Institute (JASRI), SPring-8, Hyogo 679-5198, Japan
*
Author to whom correspondence should be addressed.
Received: 19 May 2017 / Revised: 22 July 2017 / Accepted: 31 July 2017 / Published: 9 August 2017
(This article belongs to the Special Issue Advances in Transparent Conducting Materials)
View Full-Text   |   Download PDF [3742 KB, uploaded 9 August 2017]   |  

Abstract

We investigated the characteristics of carrier transport and crystallographic orientation distribution in 500-nm-thick Al-doped ZnO (AZO) polycrystalline films to achieve high-Hall-mobility AZO films. The AZO films were deposited on glass substrates at 200 °C by direct-current, radio-frequency, or radio-frequency-superimposed direct-current magnetron sputtering at various power ratios. We used sintered AZO targets with an Al2O3 content of 2.0 wt. %. The analysis of the data obtained by X-ray diffraction, Hall-effect, and optical measurements of AZO films at various power ratios showed that the complex orientation texture depending on the growth process enhanced the contribution of grain boundary scattering to carrier transport and of carrier sinks on net carrier concentration, resulting in the reduction in the Hall mobility of polycrystalline AZO films. View Full-Text
Keywords: carrier transport; crystallographic orientation; initial growth stage; transparent conducting oxide; X-ray diffraction; Al-doped ZnO; magnetron sputtering carrier transport; crystallographic orientation; initial growth stage; transparent conducting oxide; X-ray diffraction; Al-doped ZnO; magnetron sputtering
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Nomoto, J.; Inaba, K.; Kobayashi, S.; Watanabe, T.; Makino, H.; Yamamoto, T. Characteristics of Carrier Transport and Crystallographic Orientation Distribution of Transparent Conductive Al-Doped ZnO Polycrystalline Films Deposited by Radio-Frequency, Direct-Current, and Radio-Frequency-Superimposed Direct-Current Magnetron Sputtering. Materials 2017, 10, 916.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top