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Materials 2017, 10(8), 856; https://doi.org/10.3390/ma10080856

Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge

Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi’an 710071, China
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Received: 28 June 2017 / Revised: 14 July 2017 / Accepted: 22 July 2017 / Published: 26 July 2017
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Abstract

Amorphous LaxAlyO films were grown on n-type Ge substrate by atomic layer deposition using O3 and H2O as oxidant, respectively. A comparison of the XPS results indicated that a thicker interfacial layer with the component of LaGeOx and GeOx was formed at O3-based LaxAlyO/Ge interface, causing lower band gap value as well as the conduction band offset (CBO) value relative to Ge substrate for O3-based LaxAlyO film, with a concomitant degeneration in the interfacial properties. In contrast, for the H2O-based film, the leakage current of more than one order of magnitude less than that of O3-based LaxAlyO film was obtained. All the results indicated that H2O is a more appropriate oxidant for improving the interfacial properties in the atomic-layer-deposited LaxAlyO dielectric on Ge. View Full-Text
Keywords: atomic layer deposition; interfacial properties; LaxAlyO; band alignments atomic layer deposition; interfacial properties; LaxAlyO; band alignments
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Zhao, L.; Liu, H.; Wang, X.; Wang, Y.; Wang, S. Impacts of the Oxygen Precursor on the Interfacial Properties of LaxAlyO Films Grown by Atomic Layer Deposition on Ge. Materials 2017, 10, 856.

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