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Materials 2017, 10(7), 803; doi:10.3390/ma10070803

Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device

1
School of Integrative Engineering, Chung-Ang University, Heukseok-dong, Dongjak-gu, Seoul 06974, Korea
2
Department of Chemical & Biomolecular Engineering, Sogang University, Shinsu-dong, Mapo-gu, Seoul 04107, Korea
3
Department of Chemical Engineering, Kwangwoon University, 20 Gwangun-Ro, Nowon-Gu, Seoul 01897, Korea
*
Author to whom correspondence should be addressed.
Received: 14 June 2017 / Revised: 6 July 2017 / Accepted: 12 July 2017 / Published: 15 July 2017
(This article belongs to the Section Biomaterials)
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Abstract

In the present study, we propose a method for bio-nano hybrid formation by coupling a redox metalloprotein, Azurin, with CdSe-ZnS quantum dot for the development of a nanoscale resistive memory device. The covalent interaction between the two nanomaterials enables a strong and effective binding to form an azurin/CdSe-ZnS hybrid, and also enabled better controllability to couple with electrodes to examine the memory function properties. Morphological and optical properties were performed to confirm both hybrid formations and also their individual components. Current-Voltage (I–V) measurements on the hybrid nanostructures exhibited bistable current levels towards the memory function device, that and those characteristics were unnoticeable on individual nanomaterials. The hybrids showed good retention characteristics with high stability and durability, which is a promising feature for future nanoscale memory devices. View Full-Text
Keywords: azurin; CdSe-ZnS; scanning tunneling spectroscopy; bio-nano hybrid structure; resistive bistable switching azurin; CdSe-ZnS; scanning tunneling spectroscopy; bio-nano hybrid structure; resistive bistable switching
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Yagati, A.K.; Lee, T.; Choi, J.-W. Azurin/CdSe-ZnS-Based Bio-Nano Hybrid Structure for Nanoscale Resistive Memory Device. Materials 2017, 10, 803.

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