Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment
Abstract
:1. Introduction
2. Materials and Methods
2.1. Materials and Preparation Method
2.2. Characterization Method
3. Results and Discussion
3.1. Deposition Rate
3.2. Morphology
3.3. Phase Composition, Chemical Composition, and Bonding States
3.4. Deposition Mechanism
4. Conclusions
Acknowledgments
Author Contributions
Conflicts of Interest
References
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Substrate | T (°C) | T (h) | QSiCl4 | QBCl3 | QNH3 | QH2 (Dilution) | QAr | P (kPa) |
---|---|---|---|---|---|---|---|---|
(mL/min) | (mL/min) | (mL/min) | (mL/min) | (mL/min) | ||||
Carbon cloth | 900 | 7 | 102030 | 20 | 60 | 100 | 100 | 1 |
SiCl4 Flow Rate (mL/min) | Element Content (at.%) | |||
---|---|---|---|---|
B | N | Si | O | |
10 | 42.10 | 36.88 | 6.33 | 14.69 |
20 | 31.09 | 38.73 | 14.30 | 15.88 |
30 | 30.38 | 33.82 | 18.81 | 16.98 |
SiCl4 Flow Rate (mL/min) | Bonding Content (at.%) | ||
---|---|---|---|
N-B (398.28 eV) | N-Si (397.40 eV) | N-O (399.28 eV) | |
10 | 71.11 | 10.27 | 18.62 |
20 | 65.01 | 14.34 | 20.65 |
30 | 63.45 | 24.25 | 12.30 |
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Li, J.; Qin, H.; Liu, Y.; Ye, F.; Li, Z.; Cheng, L.; Zhang, L. Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment. Materials 2017, 10, 627. https://doi.org/10.3390/ma10060627
Li J, Qin H, Liu Y, Ye F, Li Z, Cheng L, Zhang L. Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment. Materials. 2017; 10(6):627. https://doi.org/10.3390/ma10060627
Chicago/Turabian StyleLi, Jianping, Hailong Qin, Yongsheng Liu, Fang Ye, Zan Li, Laifei Cheng, and Litong Zhang. 2017. "Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment" Materials 10, no. 6: 627. https://doi.org/10.3390/ma10060627