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Materials 2017, 10(6), 627; doi:10.3390/ma10060627

Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment

Science and Technology on Thermostructural Composite Materials Laboratory, Northwestern Polytechnical University, Xi’an 710072, Shaanxi, China
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Academic Editor: Christof Schneider
Received: 29 March 2017 / Revised: 12 May 2017 / Accepted: 31 May 2017 / Published: 7 June 2017
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Abstract

To improve the thermal and mechanical stability of SiCf/SiC or C/SiC composites with SiBN interphase, SiBN coating was deposited by low pressure chemical vapor deposition (LPCVD) using SiCl4-BCl3-NH3-H2-Ar gas system. The effect of the SiCl4 flow rate on deposition kinetics was investigated. Results show that deposition rate increases at first and then decreases with the increase of the SiCl4 flow rate. The surface of the coating is a uniform cauliflower-like structure at the SiCl4 flow rate of 10 mL/min and 20 mL/min. The surface is covered with small spherical particles when the flow rate is 30 mL/min. The coatings deposited at various SiCl4 flow rates are all X-ray amorphous and contain Si, B, N, and O elements. The main bonding states are B-N, Si-N, and N-O. B element and B-N bonding decrease with the increase of SiCl4 flow rate, while Si element and Si-N bonding increase. The main deposition mechanism refers to two parallel reactions of BCl3+NH3 and SiCl4+NH3. The deposition process is mainly controlled by the reaction of BCl3+NH3. View Full-Text
Keywords: SiBN coating; low pressure chemical vapor deposition; SiCl4 flow; deposition mechanism SiBN coating; low pressure chemical vapor deposition; SiCl4 flow; deposition mechanism
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MDPI and ACS Style

Li, J.; Qin, H.; Liu, Y.; Ye, F.; Li, Z.; Cheng, L.; Zhang, L. Effect of the SiCl4 Flow Rate on SiBN Deposition Kinetics in SiCl4-BCl3-NH3-H2-Ar Environment. Materials 2017, 10, 627.

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