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Materials 2017, 10(5), 459; doi:10.3390/ma10050459

Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

1
Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, Seoul 08826, Korea
2
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78758, USA
3
Department of Nanoenergy Engineering, Pusan National University, Busan 46241, Korea
*
Author to whom correspondence should be addressed.
Academic Editor: Horng-Tay Jeng
Received: 20 March 2017 / Revised: 22 April 2017 / Accepted: 25 April 2017 / Published: 26 April 2017
(This article belongs to the Special Issue Metal-Insulator Transition)
View Full-Text   |   Download PDF [2604 KB, uploaded 26 April 2017]   |  

Abstract

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n+ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device’s Si bottom electrode had a higher dopant concentration (As ion > 1019 cm−3) than the Ni/SiNx/n+ Si device; both unipolar and bipolar resistive switching behaviors were observed for the higher dopant concentration device owing to a large current overshoot. Conversely, for the device with the lower dopant concentration (As ion < 1018 cm−3), self-rectification and self-compliance were achieved owing to the series resistance of the Si bottom electrode. View Full-Text
Keywords: memory; resistive switching; self-compliance; silicon nitride memory; resistive switching; self-compliance; silicon nitride
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Kim, S.; Chang, Y.-F.; Kim, M.-H.; Kim, T.-H.; Kim, Y.; Park, B.-G. Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory. Materials 2017, 10, 459.

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