Next Article in Journal
Effect of Solidification Behavior on Microstructures and Mechanical Properties of Ni-Cr-Fe Superalloy Investment Casting
Next Article in Special Issue
ZT Optimization: An Application Focus
Previous Article in Journal
Mechanical Properties of ZTO, ITO, and a-Si:H Multilayer Films for Flexible Thin Film Solar Cells
Previous Article in Special Issue
Large-Scale Surfactant-Free Synthesis of p-Type SnTe Nanoparticles for Thermoelectric Applications
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Materials 2017, 10(3), 251; doi:10.3390/ma10030251

Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3

1
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China
2
University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Paz Vaqueiro
Received: 19 January 2017 / Revised: 18 February 2017 / Accepted: 24 February 2017 / Published: 1 March 2017
(This article belongs to the Special Issue Advances in Thermoelectric Materials)
View Full-Text   |   Download PDF [5158 KB, uploaded 1 March 2017]   |  

Abstract

Recently, Cu-containing p-type Bi0.5Sb1.5Te3 materials have shown high thermoelectric performances and promising prospects for practical application in low-grade waste heat recovery. However, the position of Cu in Bi0.5Sb1.5Te3 is controversial, and the roles of Cu in the enhancement of thermoelectric performance are still not clear. In this study, via defects analysis and stability test, the possibility of Cu intercalation in p-type Bi0.5Sb1.5Te3 materials has been excluded, and the position of Cu is identified as doping at the Sb sites. Additionally, the effects of Cu dopants on the electrical and thermal transport properties have been systematically investigated. Besides introducing additional holes, Cu dopants can also significantly enhance the carrier mobility by decreasing the Debye screen length and weakening the interaction between carriers and phonons. Meanwhile, the Cu dopants interrupt the periodicity of lattice vibration and bring stronger anharmonicity, leading to extremely low lattice thermal conductivity. Combining the suppression on the intrinsic excitation, a high thermoelectric performance—with a maximum thermoelectric figure of merit of around 1.4 at 430 K—has been achieved in Cu0.005Bi0.5Sb1.495Te3, which is 70% higher than the Bi0.5Sb1.5Te3 matrix. View Full-Text
Keywords: bismuth telluride; thermoelectric; defect; microstructures bismuth telluride; thermoelectric; defect; microstructures
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Hao, F.; Qiu, P.; Song, Q.; Chen, H.; Lu, P.; Ren, D.; Shi, X.; Chen, L. Roles of Cu in the Enhanced Thermoelectric Properties in Bi0.5Sb1.5Te3. Materials 2017, 10, 251.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top