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Materials 2017, 10(12), 1408; https://doi.org/10.3390/ma10121408

1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, Tainan 701, Taiwan
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Received: 30 October 2017 / Revised: 4 December 2017 / Accepted: 6 December 2017 / Published: 9 December 2017
(This article belongs to the Special Issue Sol-Gel Chemistry Applied to Materials Science)
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Abstract

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 2.5 cm2/Vs, low threshold voltage of −2.8 V, and low leakage current of 10−12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO2-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications. View Full-Text
Keywords: one transistor and one resistor (1T1R); organic thin-film transistor (OTFT); resistive random access memory (RRAM); sol-gel one transistor and one resistor (1T1R); organic thin-film transistor (OTFT); resistive random access memory (RRAM); sol-gel
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Lee, K.-J.; Chang, Y.-C.; Lee, C.-J.; Wang, L.-W.; Wang, Y.-H. 1T1R Nonvolatile Memory with Al/TiO2/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor. Materials 2017, 10, 1408.

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