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Materials 2017, 10(12), 1377; doi:10.3390/ma10121377

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
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Received: 8 November 2017 / Revised: 24 November 2017 / Accepted: 28 November 2017 / Published: 1 December 2017
(This article belongs to the Section Thin Films)
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Abstract

In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices. View Full-Text
Keywords: high temperature electrode; SAW sensor; electrical conductivity; langasite; Al2O3 barrier layer high temperature electrode; SAW sensor; electrical conductivity; langasite; Al2O3 barrier layer
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MDPI and ACS Style

Liu, X.; Peng, B.; Zhang, W.; Zhu, J.; Liu, X.; Wei, M. Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer. Materials 2017, 10, 1377.

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