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Materials 2017, 10(11), 1327; doi:10.3390/ma10111327

Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films

1
Department of Electronic Engineering, Hsiuping University of Science and Technology, Taichung 41280, Taiwan
2
Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung 82941, Taiwan
3
Department of Mobile Technology, Toko University, Chiayi 61363, Taiwan
4
Department of Electronic Engineering, Feng Chia University, Taichung 40724, Taiwan
*
Authors to whom correspondence should be addressed.
Received: 5 October 2017 / Revised: 3 November 2017 / Accepted: 15 November 2017 / Published: 20 November 2017
(This article belongs to the Special Issue Stretchable and Flexible Electronic Materials & Devices)
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Abstract

Bi0.8Pr0.2Fe0.95Mn0.05O3/Bi3.96Gd0.04Ti2.95W0.05O12 (BPFMO/BGTWO) bilayer thin films with Multiferroic/Ferroelectric (MF/FE) structures were deposited onto Pt(111)/Ti/SiO2/Si(100) substrates by using the sol-gel method with rapid thermal annealing. The BPFMO/BGTWO thin films exhibited well-saturated ferromagnetic and ferroelectric hysteresis loops because of the electro-magnetic coupling induced by the MF/FE structure. The remnant magnetization (2Mr) and remnant polarization (2Pr) were 4.6 emu/cm3 and 62 μC/cm2, respectively. Moreover, the bipolar I-V switching curves of BPFMO/BGTWO bilayer thin films resistive random access memory (RRAM) devices were discussed, and investigated for LRS/HRS. View Full-Text
Keywords: ferroelectric properties; multiferroic; magnetic properties; RRAM ferroelectric properties; multiferroic; magnetic properties; RRAM
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Kao, M.-C.; Chen, H.-Z.; Young, S.-L.; Chen, K.-H.; Chiang, J.-L.; Shi, J.-B. Structural, Electrical, Magnetic and Resistive Switching Properties of the Multiferroic/Ferroelectric Bilayer Thin Films. Materials 2017, 10, 1327.

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