Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method
AbstractBipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd2O3) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd2O3 thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and current versus voltage (I-V) measurement. The metal-like behavior of ohmic conduction mechanism and metallic cluster reaction of hopping conduction mechanism in initial metallic filament path forming process of the SCF-treated thin films RRAM devices was assumed and discussed. Finally, the electrical conduction mechanism of the thin films RRAM derives for set/reset was also discussed and verified in filament path physical model. View Full-Text
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Chen, K.-H.; Kao, M.-C.; Huang, S.-J.; Li, J.-Z. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method. Materials 2017, 10, 1415.
Chen K-H, Kao M-C, Huang S-J, Li J-Z. Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method. Materials. 2017; 10(12):1415.Chicago/Turabian Style
Chen, Kai-Huang; Kao, Ming-Cheng; Huang, Shou-Jen; Li, Jian-Zhi. 2017. "Bipolar Switching Properties of Neodymium Oxide RRAM Devices Using by a Low Temperature Improvement Method." Materials 10, no. 12: 1415.
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