Next Article in Journal
Modeling and Control of the Distributed Power Converters in a Standalone DC Microgrid
Next Article in Special Issue
S-Rich CdS1−yTey Thin Films Produced by the Spray Pyrolysis Technique
Previous Article in Journal
An Actuator Control Unit for Safety-Critical Mechatronic Applications with Embedded Energy Storage Backup
Previous Article in Special Issue
Progress on Low-Temperature Pulsed Electron Deposition of CuInGaSe2 Solar Cells
Article Menu
Issue 3 (March) cover image

Export Article

Open AccessArticle
Energies 2016, 9(3), 218; doi:10.3390/en9030218

Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys

Italian National Agency for New Technologies, Energy and Sustainable Economic Development (ENEA), Portici Research Center, P.le E. Fermi 1, Portici 80055, Italy
*
Author to whom correspondence should be addressed.
Academic Editor: Narottam Das
Received: 14 January 2016 / Revised: 4 March 2016 / Accepted: 10 March 2016 / Published: 18 March 2016
(This article belongs to the Special Issue Key Developments in Thin Film Solar Cells)
View Full-Text   |   Download PDF [3679 KB, uploaded 18 March 2016]   |  

Abstract

The conversion efficiency of thin-film silicon solar cells needs to be improved to be competitive with respect to other technologies. For a more efficient use of light across the solar spectrum, multi-junction architectures are being considered. Light-management considerations are also crucial in order to maximize light absorption in the active regions with a minimum of parasitic optical losses in the supportive layers. Intrinsic and doped silicon oxide alloys can be advantageously applied within thin-film Si solar cells for these purposes. Intrinsic a-SiOx:H films have been fabricated and characterized as a promising wide gap absorber for application in triple-junction solar cells. Single-junction test devices with open circuit voltage up to 950 mV and ~1 V have been demonstrated, in case of rough and flat front electrodes, respectively. Doped silicon oxide alloys with mixed-phase structure have been developed, characterized by considerably lower absorption and refractive index with respect to standard Si-based films, accompanied by electrical conductivity above 10−5 S/cm. These layers have been successfully applied both into single-junction and micromorph tandem solar cells as superior doped layers with additional functionalities. View Full-Text
Keywords: solar cells; thin-film Si; silicon oxide; mixed-phase materials; plasma enhanced chemical vapor deposition (PECVD) solar cells; thin-film Si; silicon oxide; mixed-phase materials; plasma enhanced chemical vapor deposition (PECVD)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Mercaldo, L.V.; Usatii, I.; Delli Veneri, P. Advances in Thin-Film Si Solar Cells by Means of SiOx Alloys. Energies 2016, 9, 218.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Energies EISSN 1996-1073 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top