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Energies 2016, 9(1), 42; doi:10.3390/en9010042

Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

1
Automotive & Industrial Systems Company, Panasonic Corporation, Kadoma, Osaka 571-8506, Japan
2
Advanced Research Division, Panasonic Corporation, Seika, Kyoto 619-0237, Japan
3
Eco Solution Company, Panasonic Corporation, Kaizuka, Osaka 597-0094, Japan
*
Author to whom correspondence should be addressed.
Academic Editor: Alessio Bosio
Received: 11 November 2015 / Revised: 21 December 2015 / Accepted: 4 January 2016 / Published: 13 January 2016
(This article belongs to the Special Issue Key Developments in Thin Film Solar Cells)
View Full-Text   |   Download PDF [1325 KB, uploaded 13 January 2016]   |  

Abstract

Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD. View Full-Text
Keywords: thin-film silicon tandem solar cell; microcrystalline silicon; amorphous silicon; crystallinity; plasma-enhanced chemical vapor deposition; conversion efficiency thin-film silicon tandem solar cell; microcrystalline silicon; amorphous silicon; crystallinity; plasma-enhanced chemical vapor deposition; conversion efficiency
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Hishida, M.; Sekimoto, T.; Matsumoto, M.; Terakawa, A. Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency. Energies 2016, 9, 42.

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