Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry
AbstractA detailed approach to evaluate the sub-surface damage of diamond wire-sawn monocrystalline silicon wafers relating to the sawing process is presented. Residual stresses, the presence of amorphous silicon and microcracks are considered and related to diamond wire velocity and cutting ability. In particular, the degree of amorphization of the wafer surface is analyzed, as it may affect the etching performance (texturing) during solar cell manufacture. Raman spectroscopy and Scanning Infrared Stress Explorer (SIREX) measurements are used independently as non-destructive, contactless optical characterization methods to provide stress imaging with high spatial resolution. Raman mappings show that amorphous silicon layers can occur inhomogeneously across the surface of diamond wire-sawn wafers. The Raman and SIREX results reveal a connection between a higher fraction of the amorphous phase, a more inhomogeneous stress distribution and a lower peak maximum of the stress difference on wafers, depending on both the wire wear and the wire velocity. SIREX line scans of the in-plane difference of the principal stress components ∆σ taken across the sawing grooves show significant differences in magnitude and periodicity. Furthermore, the results are compared with the microcrack depth from the same investigation areas. The possibility to optimize the diamond wire sawing processes by analyzing the sub-surface stress of the wafers is offered by complementary use of both Raman and SIREX measurements. View Full-Text
Scifeed alert for new publicationsNever miss any articles matching your research from any publisher
- Get alerts for new papers matching your research
- Find out the new papers from selected authors
- Updated daily for 49'000+ journals and 6000+ publishers
- Define your Scifeed now
Würzner, S.; Herms, M.; Kaden, T.; Möller, H.J.; Wagner, M. Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry. Energies 2017, 10, 414.
Würzner S, Herms M, Kaden T, Möller HJ, Wagner M. Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry. Energies. 2017; 10(4):414.Chicago/Turabian Style
Würzner, Sindy; Herms, Martin; Kaden, Thomas; Möller, Hans J.; Wagner, Matthias. 2017. "Characterization of the Diamond Wire Sawing Process for Monocrystalline Silicon by Raman Spectroscopy and SIREX Polarimetry." Energies 10, no. 4: 414.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.