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Energies 2017, 10(3), 341; doi:10.3390/en10030341

High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions

Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA
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Academic Editor: Alberto Castellazzi
Received: 15 December 2016 / Revised: 20 February 2017 / Accepted: 22 February 2017 / Published: 10 March 2017
(This article belongs to the Special Issue Semiconductor Power Devices)

Abstract

This paper presents a vision for the future of 3D packaging and integration of silicon carbide (SiC) power modules. Several major achievements and novel architectures in SiC modules from the past and present have been highlighted. Having considered these advancements, the major technology barriers preventing SiC power devices from performing to their fullest ability were identified. 3D wire bondless approaches adopted for enhancing the performance of silicon power modules were surveyed, and their merits were assessed to serve as a vision for the future of SiC power packaging. Current efforts pursuing 3D wire bondless SiC power modules were described, and the concept for a novel SiC power module was discussed. View Full-Text
Keywords: wide bandgap; power electronics; high power density; 3D packaging; wire bondless wide bandgap; power electronics; high power density; 3D packaging; wire bondless
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Seal, S.; Mantooth, H.A. High Performance Silicon Carbide Power Packaging—Past Trends, Present Practices, and Future Directions. Energies 2017, 10, 341.

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