Sensors 2008, 8(3), 1915-1926; doi:10.3390/s8031915
Article

A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling

1,* , 2
 and 2
Received: 25 December 2007; Accepted: 12 March 2008 / Published: 18 March 2008
(This article belongs to the Special Issue Integrated High-performance Imagers)
View Full-Text   |   Download PDF [346 KB, uploaded 21 June 2014]
Abstract: A dynamic range expansion technique for CMOS image sensors with dual charge storage in a pixel and multiple sampling technique is presented. Each pixel contains a photodiode and a storage diode which is connected to the photodiode via a separation gate. The sensitivity of the signal charge in the storage diode can be controlled either by a separation gate which limits the charge to flow into the storage diode or by controlling the accumulation time in the storage diode. The operation of the sensitivity control with separation gate techniques is simulated and it is found that a blocking layer to the storage diode plays an important role for high controllability of sensitivity of the storage diode. A prototype chip for testing multiple short time accumulations is fabricated and measured.
Keywords: Image sensor; wide dynamic range; multiple sampling; motion blur.
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Shafie, S.; Kawahito, S.; Itoh, S. A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling. Sensors 2008, 8, 1915-1926.

AMA Style

Shafie S, Kawahito S, Itoh S. A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling. Sensors. 2008; 8(3):1915-1926.

Chicago/Turabian Style

Shafie, Suhaidi; Kawahito, Shoji; Itoh, Shinya. 2008. "A Dynamic Range Expansion Technique for CMOS Image Sensors with Dual Charge Storage in a Pixel and Multiple Sampling." Sensors 8, no. 3: 1915-1926.


Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert