Sensors 2008, 8(10), 6566-6594; doi:10.3390/s8106566
Review

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

Received: 8 July 2008; in revised form: 4 September 2008 / Accepted: 17 October 2008 / Published: 23 October 2008
(This article belongs to the Special Issue Integrated High-performance Imagers)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications.
Keywords: Buried Double Junction photodetector; CMOS Image Sensor
PDF Full-text Download PDF Full-Text [1559 KB, uploaded 21 June 2014 02:04 CEST]

Export to BibTeX |
EndNote


MDPI and ACS Style

Feruglio, S.; Lu, G.-N.; Garda, P.; Vasilescu, G. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications. Sensors 2008, 8, 6566-6594.

AMA Style

Feruglio S, Lu G-N, Garda P, Vasilescu G. A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications. Sensors. 2008; 8(10):6566-6594.

Chicago/Turabian Style

Feruglio, Sylvain; Lu, Guo-Neng; Garda, Patrick; Vasilescu, Gabriel. 2008. "A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications." Sensors 8, no. 10: 6566-6594.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert