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Sensors 2006, 6(6), 643-666; doi:10.3390/s6060643

Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors

2, 1
1, 1
3 and 3,*
1 Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA 2 Department of Chemical Engineering, University of Florida, Gainesville, FL 32611 USA 3 Department of Electrical Engineering, University of Florida, Gainesville, FL 32611 USA
* Author to whom correspondence should be addressed.
Received: 6 April 2006 / Accepted: 16 May 2006 / Published: 24 June 2006
(This article belongs to the Special Issue Gas Sensors)


In this review we discuss the advances in use of GaN and ZnO-based solid-statesensors for gas sensing applications. AlGaN/GaN high electron mobility transistors(HEMTs) show a strong dependence of source/drain current on the piezoelectricpolarization -induced two dimensional electron gas (2DEG). Furthermore, spontaneous andpiezoelectric polarization induced surface and interface charges can be used to develop verysensitive but robust sensors for the detection of gases. Pt-gated GaN Schottky diodes and Sc2O3/AlGaN/GaN metal-oxide semiconductor diodes also show large change in forwardcurrents upon exposure to H2 containing ambients. Of particular interest are methods fordetecting ethylene (C2H4), which offers problems because of its strong double bonds andhence the difficulty in dissociating it at modest temperatures. ZnO nanorods offer largesurface area, are bio-safe and offer excellent gas sensing characteristics.
Keywords: GaN; ZnO; gas sensors GaN; ZnO; gas sensors
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Kang, B.S.; Wang, H.-T.; Tien, L.- .; Ren, F.; Gila, B.P.; Norton, D.P.; Abernathy, C.R.; Lin, J.; Pearton, S.J. Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors. Sensors 2006, 6, 643-666.

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