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Polycrystalline Silicon ISFETs on Glass Substrate
Cambridge University Engineering Department, Trumpington Street, Cambridge CB2 1PZ, United Kingdom
Technology Platform Research Center, Seiko Epson Corporation, 281 Fujimi, Fujimi-machi, Suwagun, Nagano-ken 399-0293, Japan
* Author to whom correspondence should be addressed.
Received: 1 June 2004; in revised form: / Accepted: 9 May 2005 / Published: 10 May 2005
Abstract: The Ion Sensitive Field Effect Transistor (ISFET) operation based onpolycrystalline silicon thin film transistors is reported. These devices can be fabricated oninexpensive disposable substrates such as glass or plastics and are, therefore, promisingcandidates for low cost single-use intelligent multisensors. In this work we have developedan extended gate structure with PE-CVD Si3N4 deposited on top of a conductor, which alsoprovides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity(54 mV/pH) and stable operation have been achieved. Temperature effects have also beencharacterized. A penicillin sensor has been fabricated by functionalizing the sensing areawith penicillinase. The shift increases almost linearly upon the increase of penicillinconcentration until saturation is reached for ~ 7 mM. Poly-Si TFT structures with a goldsensing area have been also successfully applied to field-effect detection of DNA.
Keywords: polycrystalline silicon thin film transistor; Ion Sensitive Field Effect Transistor; pH sensor; penicillin; DNA; silicon nitride.
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Cite This Article
MDPI and ACS Style
Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H. Polycrystalline Silicon ISFETs on Glass Substrate. Sensors 2005, 5, 293-301.
Yan F, Estrela P, Mo Y, Migliorato P, Maeda H. Polycrystalline Silicon ISFETs on Glass Substrate. Sensors. 2005; 5(4):293-301.
Yan, Feng; Estrela, Pedro; Mo, Yang; Migliorato, Piero; Maeda, Hiroshi. 2005. "Polycrystalline Silicon ISFETs on Glass Substrate." Sensors 5, no. 4: 293-301.