Sensors 2005, 5(4), 293-301; doi:10.3390/s5040293

Polycrystalline Silicon ISFETs on Glass Substrate

1, 1, 1, 1,* email and 2
Received: 1 June 2004; Accepted: 9 May 2005 / Published: 10 May 2005
(This article belongs to the Special Issue Papers presented at I3S2004, Nanjing)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: The Ion Sensitive Field Effect Transistor (ISFET) operation based onpolycrystalline silicon thin film transistors is reported. These devices can be fabricated oninexpensive disposable substrates such as glass or plastics and are, therefore, promisingcandidates for low cost single-use intelligent multisensors. In this work we have developedan extended gate structure with PE-CVD Si3N4 deposited on top of a conductor, which alsoprovides the electrical connection to the remote TFT gate. Nearly ideal pH sensitivity(54 mV/pH) and stable operation have been achieved. Temperature effects have also beencharacterized. A penicillin sensor has been fabricated by functionalizing the sensing areawith penicillinase. The shift increases almost linearly upon the increase of penicillinconcentration until saturation is reached for ~ 7 mM. Poly-Si TFT structures with a goldsensing area have been also successfully applied to field-effect detection of DNA.
Keywords: polycrystalline silicon thin film transistor; Ion Sensitive Field Effect Transistor; pH sensor; penicillin; DNA; silicon nitride.
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MDPI and ACS Style

Yan, F.; Estrela, P.; Mo, Y.; Migliorato, P.; Maeda, H. Polycrystalline Silicon ISFETs on Glass Substrate. Sensors 2005, 5, 293-301.

AMA Style

Yan F, Estrela P, Mo Y, Migliorato P, Maeda H. Polycrystalline Silicon ISFETs on Glass Substrate. Sensors. 2005; 5(4):293-301.

Chicago/Turabian Style

Yan, Feng; Estrela, Pedro; Mo, Yang; Migliorato, Piero; Maeda, Hiroshi. 2005. "Polycrystalline Silicon ISFETs on Glass Substrate." Sensors 5, no. 4: 293-301.

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