Sensors 2003, 3(11), 504-508; doi:10.3390/s3110504
Article

Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

Karpov Research Institute For Physical Chemistry, ul. Vorontsovo Pole 10, 105064 Moscow, Russia
* Author to whom correspondence should be addressed.
Received: 1 May 2003; Accepted: 5 October 2003 / Published: 5 December 2003
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Abstract: In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS), which allowed evaluating heterogeneous death-rate of ozone (γ) Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb).
Keywords: semiconductor sensors; heterogeneous death-rate of ozone; Teflon

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MDPI and ACS Style

Obvintseva, L.A.; Chibirova, F.K.; Kazakov, S.A.; Avetisov, A.K.; Strobkova, M.V.; Finogenova, N.V. Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface. Sensors 2003, 3, 504-508.

AMA Style

Obvintseva LA, Chibirova FK, Kazakov SA, Avetisov AK, Strobkova MV, Finogenova NV. Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface. Sensors. 2003; 3(11):504-508.

Chicago/Turabian Style

Obvintseva, Ludmila A.; Chibirova, Fatima K.; Kazakov, Serge A.; Avetisov, Alexander K.; Strobkova, Marina V.; Finogenova, Nataliya V. 2003. "Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface." Sensors 3, no. 11: 504-508.

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