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Sensors 2003, 3(11), 504-508; doi:10.3390/s3110504
Article

Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

, * , , ,  and
Karpov Research Institute For Physical Chemistry, ul. Vorontsovo Pole 10, 105064 Moscow, Russia
* Author to whom correspondence should be addressed.
Received: 1 May 2003 / Accepted: 5 October 2003 / Published: 5 December 2003
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Abstract

In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS), which allowed evaluating heterogeneous death-rate of ozone (γ) Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb).
Keywords: semiconductor sensors; heterogeneous death-rate of ozone; Teflon semiconductor sensors; heterogeneous death-rate of ozone; Teflon
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Obvintseva, L.A.; Chibirova, F.K.; Kazakov, S.A.; Avetisov, A.K.; Strobkova, M.V.; Finogenova, N.V. Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface. Sensors 2003, 3, 504-508.

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