Next Article in Journal
A Review of Pedestrian Indoor Positioning Systems for Mass Market Applications
Next Article in Special Issue
TiO2-Based Nanoheterostructures for Promoting Gas Sensitivity Performance: Designs, Developments, and Prospects
Previous Article in Journal
RUDO: A Home Ambient Intelligence System for Blind People
Previous Article in Special Issue
CeO2 Enhanced Ethanol Sensing Performance in a CdS Gas Sensor
Article Menu
Issue 8 (August) cover image

Export Article

Open AccessArticle
Sensors 2017, 17(8), 1929; https://doi.org/10.3390/s17081929

A Fast Room Temperature NH3 Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes

1
Collaborative Innovation Center of Advanced Microstructures, State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
2
Shanghai Ultra-Precision Optical Manufacturing Engineering Center and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China
*
Authors to whom correspondence should be addressed.
Received: 12 July 2017 / Revised: 18 August 2017 / Accepted: 19 August 2017 / Published: 22 August 2017
(This article belongs to the Collection Gas Sensors)
View Full-Text   |   Download PDF [6342 KB, uploaded 23 August 2017]   |  

Abstract

In this paper, an electrical-based NH3 sensor with an Al/p-Si/Al structure is reported. The p-Si substrate is microstructured by fs-laser irradiation and then etched by 30% alkaline solution. This sensor works well at room temperature with fast response/recovery for NH3 gas at 5–100 ppm concentration. However, when the sensor is annealed in N2/H2 forming gas or short-circuited for Al/Si electrodes, its sensitivity decreases drastically and almost vanishes. Further I-V and FT-IR results show that the two back-to-back Schottky diodes on the device play a key role in its sensing performance. View Full-Text
Keywords: silicon; ammonia; gas sensor; microstructure silicon; ammonia; gas sensor; microstructure
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Share & Cite This Article

MDPI and ACS Style

Zhu, S.; Liu, X.; Zhuang, J.; Zhao, L. A Fast Room Temperature NH3 Sensor Based on an Al/p-Si/Al Structure with Schottky Electrodes. Sensors 2017, 17, 1929.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top