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Sensors 2014, 14(3), 4484-4494; doi:10.3390/s140304484

Electrical Characterization of Photodetectors Based on Poly(3-hexylthiophene-2,5-diyl) Layers

Área de Electrónica, Universidad Miguel Hernández, Av. Universidad s/n, Ed. Quorum V, Elche 03202, Spain
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Received: 23 December 2013 / Revised: 28 February 2014 / Accepted: 3 March 2014 / Published: 6 March 2014
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Spain 2013)
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Abstract

This paper presents the electrical characteristics of solution-processed organic photodetectors based on poly(3-hexylthiophene-2,5-diyl) semiconducting polymer layers deposited by spin-coating on interdigitated metal electrodes. Four different electrode shapes have been used for this study in order to appraise the optimum electrode geometry. The measurement of the resistance as a function of the temperature reveals a transition from negative to positive temperature coefficient material around 80 °C for the polymer layers. Besides, slow reversible changes in the photodetectors conductivity were observed when moved from vacuum to the air and under illumination with a xenon lamp, which can be explained by the formation of charge transfer complexes with molecular oxygen and the polymer. The photogenerated current-light power ratio was found to be approximately linear in the 200 to 550 mW/cm2 range. View Full-Text
Keywords: photodetectors; conducting polymers; P3HT; organic devices photodetectors; conducting polymers; P3HT; organic devices
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Ferrer, J.C.; Alonso, J.L.; de Ávila, S.F. Electrical Characterization of Photodetectors Based on Poly(3-hexylthiophene-2,5-diyl) Layers. Sensors 2014, 14, 4484-4494.

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