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Sensors 2014, 14(3), 4484-4494; doi:10.3390/s140304484

Electrical Characterization of Photodetectors Based on Poly(3-hexylthiophene-2,5-diyl) Layers

* ,
Área de Electrónica, Universidad Miguel Hernández, Av. Universidad s/n, Ed. Quorum V, Elche 03202, Spain
* Author to whom correspondence should be addressed.
Received: 23 December 2013 / Revised: 28 February 2014 / Accepted: 3 March 2014 / Published: 6 March 2014
(This article belongs to the Special Issue State-of-the-Art Sensors Technology in Spain 2013)
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This paper presents the electrical characteristics of solution-processed organic photodetectors based on poly(3-hexylthiophene-2,5-diyl) semiconducting polymer layers deposited by spin-coating on interdigitated metal electrodes. Four different electrode shapes have been used for this study in order to appraise the optimum electrode geometry. The measurement of the resistance as a function of the temperature reveals a transition from negative to positive temperature coefficient material around 80 °C for the polymer layers. Besides, slow reversible changes in the photodetectors conductivity were observed when moved from vacuum to the air and under illumination with a xenon lamp, which can be explained by the formation of charge transfer complexes with molecular oxygen and the polymer. The photogenerated current-light power ratio was found to be approximately linear in the 200 to 550 mW/cm2 range.
Keywords: photodetectors; conducting polymers; P3HT; organic devices photodetectors; conducting polymers; P3HT; organic devices
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Ferrer, J.C.; Alonso, J.L.; de Ávila, S.F. Electrical Characterization of Photodetectors Based on Poly(3-hexylthiophene-2,5-diyl) Layers. Sensors 2014, 14, 4484-4494.

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