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Sensors 2012, 12(4), 3952-3963; doi:10.3390/s120403952

A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications

1,* , 1,2
1 National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu Science Park, Hsinchu 300, Taiwan 2 Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan 3 Graduate Institute of Biomedical Sciences, Chang Gung University, Taoyuan 333, Taiwan
* Author to whom correspondence should be addressed.
Received: 13 January 2012 / Revised: 20 February 2012 / Accepted: 22 March 2012 / Published: 26 March 2012
(This article belongs to the Special Issue Sensing at the Nano-Scale: Chemical and Bio-Sensing)
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This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. The nanowire manufacturing technique reduced nanowire width scaling to 50 nm without use of extra lithography equipment, and exhibited superior device uniformity. These n type polysilicon nanowire FETs have positive pH sensitivity (100 mV/pH) and sensitive deoxyribonucleic acid (DNA) detection ability (100 pM) at normal system operation voltages. Specially designed oxide-nitride-oxide buried oxide nanowire realizes an electrically Vth-adjustable sensor to compensate device variation. These nanowire FETs also enable non-volatile memory application for a large and steady Vth adjustment window (>2 V Programming/Erasing window). The CMOS-compatible manufacturing technique of polysilicon nanowire FETs offers a possible solution for commercial System-on-Chip biosensor application, which enables portable physiology monitoring and in situ recording.
Keywords: nano-sensor fabrication; nanowire FET; nonvolatile memories; semiconductive sensors nano-sensor fabrication; nanowire FET; nonvolatile memories; semiconductive sensors
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Chen, M.-C.; Chen, H.-Y.; Lin, C.-Y.; Chien, C.-H.; Hsieh, T.-F.; Horng, J.-T.; Qiu, J.-T.; Huang, C.-C.; Ho, C.-H.; Yang, F.-L. A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications. Sensors 2012, 12, 3952-3963.

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